Double- and triple-crystal X-ray diffractometry of microdefects in silicon

The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2010
Автори: Molodkin, V.B., Olikhovskii, S.I., Kyslovskyy, Ye.M., Len, E.G., Reshetnyk, O.V., Vladimirova, T.P., V.V. Lizunov, V.V., Lizunova, S.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118577
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118577
record_format dspace
spelling Molodkin, V.B.
Olikhovskii, S.I.
Kyslovskyy, Ye.M.
Len, E.G.
Reshetnyk, O.V.
Vladimirova, T.P.
V.V. Lizunov, V.V.
Lizunova, S.V.
2017-05-30T16:30:54Z
2017-05-30T16:30:54Z
2010
Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS 61.72.Dd
https://nasplib.isofts.kiev.ua/handle/123456789/118577
The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained subsurface layers. Being based on this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity to defect structures with wide size distributions as compared with any of these methods alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations of small oxygen precipitates as well as small and large dislocation loops have been determined using this method.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Double- and triple-crystal X-ray diffractometry of microdefects in silicon
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Double- and triple-crystal X-ray diffractometry of microdefects in silicon
spellingShingle Double- and triple-crystal X-ray diffractometry of microdefects in silicon
Molodkin, V.B.
Olikhovskii, S.I.
Kyslovskyy, Ye.M.
Len, E.G.
Reshetnyk, O.V.
Vladimirova, T.P.
V.V. Lizunov, V.V.
Lizunova, S.V.
title_short Double- and triple-crystal X-ray diffractometry of microdefects in silicon
title_full Double- and triple-crystal X-ray diffractometry of microdefects in silicon
title_fullStr Double- and triple-crystal X-ray diffractometry of microdefects in silicon
title_full_unstemmed Double- and triple-crystal X-ray diffractometry of microdefects in silicon
title_sort double- and triple-crystal x-ray diffractometry of microdefects in silicon
author Molodkin, V.B.
Olikhovskii, S.I.
Kyslovskyy, Ye.M.
Len, E.G.
Reshetnyk, O.V.
Vladimirova, T.P.
V.V. Lizunov, V.V.
Lizunova, S.V.
author_facet Molodkin, V.B.
Olikhovskii, S.I.
Kyslovskyy, Ye.M.
Len, E.G.
Reshetnyk, O.V.
Vladimirova, T.P.
V.V. Lizunov, V.V.
Lizunova, S.V.
publishDate 2010
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained subsurface layers. Being based on this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity to defect structures with wide size distributions as compared with any of these methods alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations of small oxygen precipitates as well as small and large dislocation loops have been determined using this method.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118577
citation_txt Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ.
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