Double- and triple-crystal X-ray diffractometry of microdefects in silicon
The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2010 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118577 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118577 |
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| record_format |
dspace |
| spelling |
Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. 2017-05-30T16:30:54Z 2017-05-30T16:30:54Z 2010 Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 61.72.Dd https://nasplib.isofts.kiev.ua/handle/123456789/118577 The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained subsurface layers. Being based on this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity to defect structures with wide size distributions as compared with any of these methods alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations of small oxygen precipitates as well as small and large dislocation loops have been determined using this method. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Double- and triple-crystal X-ray diffractometry of microdefects in silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| spellingShingle |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. |
| title_short |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_full |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_fullStr |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_full_unstemmed |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_sort |
double- and triple-crystal x-ray diffractometry of microdefects in silicon |
| author |
Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. |
| author_facet |
Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The generalized dynamical theory of X-ray scattering by real single crystals
allows to self-consistently describe intensities of coherent and diffuse scattering
measured by double- and triple-crystal diffractometers (DCD and TCD) from single
crystals with defects in crystal bulk and with strained subsurface layers. Being based on
this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity
to defect structures with wide size distributions as compared with any of these methods
alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations
of small oxygen precipitates as well as small and large dislocation loops have been
determined using this method.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118577 |
| citation_txt |
Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. |
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