Double- and triple-crystal X-ray diffractometry of microdefects in silicon
The generalized dynamical theory of X-ray scattering by real single crystals
 allows to self-consistently describe intensities of coherent and diffuse scattering
 measured by double- and triple-crystal diffractometers (DCD and TCD) from single
 crystals with defects in crysta...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118577 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Double- and triple-crystal X-ray diffractometry
 of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862692485085528064 |
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| author | Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. |
| author_facet | Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. |
| citation_txt | Double- and triple-crystal X-ray diffractometry
 of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The generalized dynamical theory of X-ray scattering by real single crystals
allows to self-consistently describe intensities of coherent and diffuse scattering
measured by double- and triple-crystal diffractometers (DCD and TCD) from single
crystals with defects in crystal bulk and with strained subsurface layers. Being based on
this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity
to defect structures with wide size distributions as compared with any of these methods
alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations
of small oxygen precipitates as well as small and large dislocation loops have been
determined using this method.
|
| first_indexed | 2025-12-07T16:18:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118577 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:18:38Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. 2017-05-30T16:30:54Z 2017-05-30T16:30:54Z 2010 Double- and triple-crystal X-ray diffractometry
 of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 61.72.Dd https://nasplib.isofts.kiev.ua/handle/123456789/118577 The generalized dynamical theory of X-ray scattering by real single crystals
 allows to self-consistently describe intensities of coherent and diffuse scattering
 measured by double- and triple-crystal diffractometers (DCD and TCD) from single
 crystals with defects in crystal bulk and with strained subsurface layers. Being based on
 this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity
 to defect structures with wide size distributions as compared with any of these methods
 alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations
 of small oxygen precipitates as well as small and large dislocation loops have been
 determined using this method. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Double- and triple-crystal X-ray diffractometry of microdefects in silicon Article published earlier |
| spellingShingle | Double- and triple-crystal X-ray diffractometry of microdefects in silicon Molodkin, V.B. Olikhovskii, S.I. Kyslovskyy, Ye.M. Len, E.G. Reshetnyk, O.V. Vladimirova, T.P. V.V. Lizunov, V.V. Lizunova, S.V. |
| title | Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_full | Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_fullStr | Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_full_unstemmed | Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_short | Double- and triple-crystal X-ray diffractometry of microdefects in silicon |
| title_sort | double- and triple-crystal x-ray diffractometry of microdefects in silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118577 |
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