Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers
The results of studies of the spectral characteristics of the m-n⁰-n-structure
 with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped
 AlGaAs layers are presented. It is experimentally revealed that own defects and
 oxygen impurities intr...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118592 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ. |