Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автори: Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Saidova, R.A., Yakubov, A.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118592
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ.

The results of studies of the spectral characteristics of the m-n⁰-n-structure
 with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped
 AlGaAs layers are presented. It is experimentally revealed that own defects and
 oxygen impurities introduced into the thin active n-area, whose thickness is about the
 diffusion length, promote the greater photoresponse in the impurity spectral band (1.2
 and 1.55 µm). At the same time, impurities present in GaInAs at the background level
 can be excited, although ineffectively, from the quasineutral part of the active region
 depleted by the blocking voltage.