Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers
The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally revealed that own defects and oxygen impurities introduced into the thin act...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118592 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ. |