Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Authors: Yodgorova, D.M., Karimov, A.V., Giyasova, F.A., Saidova, R.A., Yakubov, A.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118592
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 26-28. — Бібліогр.: 7 назв. — англ.

The results of studies of the spectral characteristics of the m-n⁰-n-structure
 with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped
 AlGaAs layers are presented. It is experimentally revealed that own defects and
 oxygen impurities intr...