Using ellipsometry methods for depth analyzing the optical disc data layer relief structures
We studied the relief depth of the data layer formed in a glass disk by ion beam etching process with using classical ellipsometry at the constant wavelength 632.8 nm for different angles of incidence. It was found that for 0° and 90° azimuth angles, a pair of ellipsometric parameters Ψ and ∆ is...
Збережено в:
| Дата: | 2008 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118596 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Using ellipsometry methods for depth analyzing the optical disc data layer relief structures / V.G. Kravets, I.V. Gorbov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 11-15. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We studied the relief depth of the data layer formed in a glass disk by ion beam
etching process with using classical ellipsometry at the constant wavelength 632.8 nm for
different angles of incidence. It was found that for 0° and 90° azimuth angles, a pair of
ellipsometric parameters Ψ and ∆ is sufficient to characterize the changes in light
reflection for various structure depths. The depth of optical disc data layer relief
structures was estimated via experimental dependences of ellipsometric parameters. The
estimated data layer depths were found to be in good agreement with independent
tunnelling electron microscopy measurements. |
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