Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics

In this work, effect of porous macrostructure on the thermoelectric properties
 of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has
 been investigated. Temperature dependences of the conductivity and thermal e.m.f. have
 been measured within...

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Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2009
Автори: Kiselov, V.S., Poludin, V.I., Kiselyuk, M.P., Kryskov, T.А., Belyaev, A.E.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118603
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics / V.S. Kiselov, V.I. Poludin, M.P. Kiselyuk, T.А. Kryskov, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 64-67. — Бібліогр.: 13 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:In this work, effect of porous macrostructure on the thermoelectric properties
 of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has
 been investigated. Temperature dependences of the conductivity and thermal e.m.f. have
 been measured within the range 20-700 °C. It has been shown that electrical resistivity of
 the samples decreases drastically as temperature increases over the entire temperature
 range, indicating semiconductor behavior. All the samples demonstrate a negative
 thermal e.m.f. confirming the electronic mechanism of charge transfer. It is ascertained
 that anisotropy of porous macrostructure of the ceramics influences considerably on their
 electric and thermoelectric properties. The figure of merit maximum value of 1.2×10⁻⁵ K⁻¹
 at 700 °C was obtained.
ISSN:1560-8034