Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures
We present the results of investigations of the effect caused by low magnetic
 field treatment on InP single crystals impurity-defect composition. This effect was found
 when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm
 range at 77 K. The sta...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118606 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. |