Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• 1. Verfasser: Red’ko, R. R.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118606
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ.

We present the results of investigations of the effect caused by low magnetic field treatment on InP single crystals impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm range at 77 K. The static magnet with B = 0.44 T was used as a source of magnetic field. We studied samples of two groups: porous InP crystals and epitaxial layers grown on porous substrate. The crystals of both groups were not specially doped. It has been obtained that treatment even for 0.02 min resulted in considerable changes in luminescence spectra. The luminescence intensities after treatment increase at first, but later behavior is nonmonotonic: next treatment can result in decrease or increase a value of intensities of both observed bands. It should be noted that the luminescence intensities of epitaxial layers, perhaps, changed as well as concentration of nonradiative centers changed. But for porous indium phosphide, these features were not observed.