Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures
We present the results of investigations of the effect caused by low magnetic
 field treatment on InP single crystals impurity-defect composition. This effect was found
 when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm
 range at 77 K. The sta...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118606 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862746144219594752 |
|---|---|
| author | Red’ko, R. R. |
| author_facet | Red’ko, R. R. |
| citation_txt | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We present the results of investigations of the effect caused by low magnetic
field treatment on InP single crystals impurity-defect composition. This effect was found
when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm
range at 77 K. The static magnet with B = 0.44 T was used as a source of magnetic field.
We studied samples of two groups: porous InP crystals and epitaxial layers grown on
porous substrate. The crystals of both groups were not specially doped. It has been
obtained that treatment even for 0.02 min resulted in considerable changes in
luminescence spectra. The luminescence intensities after treatment increase at first, but
later behavior is nonmonotonic: next treatment can result in decrease or increase a value
of intensities of both observed bands. It should be noted that the luminescence intensities
of epitaxial layers, perhaps, changed as well as concentration of nonradiative centers
changed. But for porous indium phosphide, these features were not observed.
|
| first_indexed | 2025-12-07T20:44:18Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118606 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:44:18Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Red’ko, R. R. 2017-05-30T17:16:16Z 2017-05-30T17:16:16Z 2009 Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 68.55.-a, 71.55.Eq, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/118606 We present the results of investigations of the effect caused by low magnetic
 field treatment on InP single crystals impurity-defect composition. This effect was found
 when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm
 range at 77 K. The static magnet with B = 0.44 T was used as a source of magnetic field.
 We studied samples of two groups: porous InP crystals and epitaxial layers grown on
 porous substrate. The crystals of both groups were not specially doped. It has been
 obtained that treatment even for 0.02 min resulted in considerable changes in
 luminescence spectra. The luminescence intensities after treatment increase at first, but
 later behavior is nonmonotonic: next treatment can result in decrease or increase a value
 of intensities of both observed bands. It should be noted that the luminescence intensities
 of epitaxial layers, perhaps, changed as well as concentration of nonradiative centers
 changed. But for porous indium phosphide, these features were not observed. The author is grateful to Drs. I.N. Arsentyev and
 V.P. Ulin for the provision of samples and to Dr.
 V.V. Milenin for his permanent interest to the work and
 the fruitful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures Article published earlier |
| spellingShingle | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures Red’ko, R. R. |
| title | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_full | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_fullStr | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_full_unstemmed | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_short | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_sort | effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118606 |
| work_keys_str_mv | AT redkorr effectoflowmagneticfieldtreatmentonspectraofradiativerecombinationcentersinindiumphosphidestructures |