Properties of junction diodes under conditions of bisotropic strains

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2009
• Автор: Borblik, V.L.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118608
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Properties of junction diodes under conditions
 of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ.

In consideration of influence of technological strains on characteristics of
 junction diodes located on surface of silicon wafers, biaxial character of such strains has
 taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
 surface the diodes are located as well as longitudinal (in plane of the wafer) and
 transversal (perpendicular to it) diode current flow have been considered. It is shown that
 at small strains, the diodes located on the surface of (111)-Si are less subjected (as a
 whole) to their influence. Furthermore, the change in the intrinsic carrier concentration
 has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown
 to increase by several orders of magnitude irrespective of the strain sign.