Properties of junction diodes under conditions of bisotropic strains
In consideration of influence of technological strains on characteristics of
 junction diodes located on surface of silicon wafers, biaxial character of such strains has
 taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
 surface the diodes ar...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2009 |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118608 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Properties of junction diodes under conditions
 of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862738682702725120 |
|---|---|
| author | Borblik, V.L. |
| author_facet | Borblik, V.L. |
| citation_txt | Properties of junction diodes under conditions
 of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In consideration of influence of technological strains on characteristics of
junction diodes located on surface of silicon wafers, biaxial character of such strains has
taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
surface the diodes are located as well as longitudinal (in plane of the wafer) and
transversal (perpendicular to it) diode current flow have been considered. It is shown that
at small strains, the diodes located on the surface of (111)-Si are less subjected (as a
whole) to their influence. Furthermore, the change in the intrinsic carrier concentration
has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown
to increase by several orders of magnitude irrespective of the strain sign.
|
| first_indexed | 2025-12-07T20:05:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118608 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:05:14Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. 2017-05-30T17:19:15Z 2017-05-30T17:19:15Z 2009 Properties of junction diodes under conditions
 of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 77.65.Ly, 78.66.-w, 79.60.Jv, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/118608 In consideration of influence of technological strains on characteristics of
 junction diodes located on surface of silicon wafers, biaxial character of such strains has
 taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
 surface the diodes are located as well as longitudinal (in plane of the wafer) and
 transversal (perpendicular to it) diode current flow have been considered. It is shown that
 at small strains, the diodes located on the surface of (111)-Si are less subjected (as a
 whole) to their influence. Furthermore, the change in the intrinsic carrier concentration
 has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown
 to increase by several orders of magnitude irrespective of the strain sign. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Properties of junction diodes under conditions of bisotropic strains Article published earlier |
| spellingShingle | Properties of junction diodes under conditions of bisotropic strains Borblik, V.L. |
| title | Properties of junction diodes under conditions of bisotropic strains |
| title_full | Properties of junction diodes under conditions of bisotropic strains |
| title_fullStr | Properties of junction diodes under conditions of bisotropic strains |
| title_full_unstemmed | Properties of junction diodes under conditions of bisotropic strains |
| title_short | Properties of junction diodes under conditions of bisotropic strains |
| title_sort | properties of junction diodes under conditions of bisotropic strains |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118608 |
| work_keys_str_mv | AT borblikvl propertiesofjunctiondiodesunderconditionsofbisotropicstrains |