Properties of junction diodes under conditions of bisotropic strains

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• 1. Verfasser: Borblik, V.L.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118608
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Properties of junction diodes under conditions
 of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ.

In consideration of influence of technological strains on characteristics of
 junction diodes located on surface of silicon wafers, biaxial character of such strains has
 taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
 surface the diodes ar...