Properties of junction diodes under conditions of bisotropic strains
In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as lon...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2009 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118608 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Properties of junction diodes under conditions of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
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