Reliability of AC thick-film electroluminescent lamps

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2009
• Автори: Vlaskin, V., Vlaskina, S., Berezhinsky, L., Svechnikov, G.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118690
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Reliability of AC thick-film electroluminescent lamps / V. Vlaskin, S. Vlaskina, L. Berezhinsky, G. Svyechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 173-177. — Бібліогр.: 5 назв. — англ.

The reliability of AC thick-film EL devices has been studied. The AC thickfilm
 EL devices were fabricated by Novatech Inc. using the industrial print screen
 technology. The analysis of reasons for failure has been proposed. The dependence of EL
 lamp parameters on physical properties of the device EL layers was found. Our analysis
 of the breakdown spot showed that improvement of reliability can be reached using the
 additional dielectric layer between the phosphor layer and transparent electrode, high
 concentration of phosphor powder 70 % and binder 30 %, balanced resistance between
 the electric circuit and EL lamp. The thickness of the phosphor layer was equal to H =
 (1 + √3/2)D (hexagonal packing), where D is the mean diameter of phosphor particles.
 The reliability dependence of EL lamp on a water adsorption property of packaging
 material was revealed.