Laser-induced incandescence of silicon surface under 1064-nm excitation
Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended by visible changes of the surface geometry. The anomalous behavior of the...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118730 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Laser-induced incandescence (LII) of silicon surface is investigated under the
excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
increase of LII signal is observed, which is attended by visible changes of the surface
geometry. The anomalous behavior of the parameter of non-linearity of LII is observed
with the increase of laser excitation power.
|
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| ISSN: | 1560-8034 |