Laser-induced incandescence of silicon surface under 1064-nm excitation
Laser-induced incandescence (LII) of silicon surface is investigated under the
 excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
 increase of LII signal is observed, which is attended by visible changes of the surface
 geometry. The an...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118730 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Laser-induced incandescence (LII) of silicon surface is investigated under the
excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
increase of LII signal is observed, which is attended by visible changes of the surface
geometry. The anomalous behavior of the parameter of non-linearity of LII is observed
with the increase of laser excitation power.
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| ISSN: | 1560-8034 |