Laser-induced incandescence of silicon surface under 1064-nm excitation
Laser-induced incandescence (LII) of silicon surface is investigated under the
 excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
 increase of LII signal is observed, which is attended by visible changes of the surface
 geometry. The an...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118730 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862680127410798592 |
|---|---|
| author | Kopyshinsky, A.V. Zelensky, S.E. Gomon, E.A. Rozouvan, S.G. Kolesnik, A.S. |
| author_facet | Kopyshinsky, A.V. Zelensky, S.E. Gomon, E.A. Rozouvan, S.G. Kolesnik, A.S. |
| citation_txt | Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Laser-induced incandescence (LII) of silicon surface is investigated under the
excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
increase of LII signal is observed, which is attended by visible changes of the surface
geometry. The anomalous behavior of the parameter of non-linearity of LII is observed
with the increase of laser excitation power.
|
| first_indexed | 2025-12-07T15:46:07Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118730 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:46:07Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kopyshinsky, A.V. Zelensky, S.E. Gomon, E.A. Rozouvan, S.G. Kolesnik, A.S. 2017-05-31T05:25:26Z 2017-05-31T05:25:26Z 2012 Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.80.Ba, 81.40.Wx https://nasplib.isofts.kiev.ua/handle/123456789/118730 Laser-induced incandescence (LII) of silicon surface is investigated under the
 excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
 increase of LII signal is observed, which is attended by visible changes of the surface
 geometry. The anomalous behavior of the parameter of non-linearity of LII is observed
 with the increase of laser excitation power. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Laser-induced incandescence of silicon surface under 1064-nm excitation Article published earlier |
| spellingShingle | Laser-induced incandescence of silicon surface under 1064-nm excitation Kopyshinsky, A.V. Zelensky, S.E. Gomon, E.A. Rozouvan, S.G. Kolesnik, A.S. |
| title | Laser-induced incandescence of silicon surface under 1064-nm excitation |
| title_full | Laser-induced incandescence of silicon surface under 1064-nm excitation |
| title_fullStr | Laser-induced incandescence of silicon surface under 1064-nm excitation |
| title_full_unstemmed | Laser-induced incandescence of silicon surface under 1064-nm excitation |
| title_short | Laser-induced incandescence of silicon surface under 1064-nm excitation |
| title_sort | laser-induced incandescence of silicon surface under 1064-nm excitation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118730 |
| work_keys_str_mv | AT kopyshinskyav laserinducedincandescenceofsiliconsurfaceunder1064nmexcitation AT zelenskyse laserinducedincandescenceofsiliconsurfaceunder1064nmexcitation AT gomonea laserinducedincandescenceofsiliconsurfaceunder1064nmexcitation AT rozouvansg laserinducedincandescenceofsiliconsurfaceunder1064nmexcitation AT kolesnikas laserinducedincandescenceofsiliconsurfaceunder1064nmexcitation |