Laser-induced incandescence of silicon surface under 1064-nm excitation
Laser-induced incandescence (LII) of silicon surface is investigated under the
 excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
 increase of LII signal is observed, which is attended by visible changes of the surface
 geometry. The an...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118730 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ. |