Laser-induced incandescence of silicon surface under 1064-nm excitation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Kopyshinsky, A.V., Zelensky, S.E., Gomon, E.A., Rozouvan, S.G., Kolesnik, A.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118730
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Laser-induced incandescence of silicon surface under 1064-nm excitation / A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 376-381. — Бібліогр.: 26 назв. — англ.

Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended by visible changes of the surface geometry. The anomalous behavior of the...