Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Current-voltage characteristics, spectral dependences of photovoltage and
 short-circuit current of the structures based on porous silicon at adsorption of iodine
 molecules are presented. It is revealed widening the spectral range of photosensitivity in
 the samples in short...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2012 |
| ISSN: | 1560-8034 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118731 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Current-voltage characteristics, spectral dependences of photovoltage and
short-circuit current of the structures based on porous silicon at adsorption of iodine
molecules are presented. It is revealed widening the spectral range of photosensitivity in
the samples in short-wavelength range as compared with that of single crystal silicon.
Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has
been investigated. The results are explained in the frame of qualitative model that
involves formation of p-n-transitions in these structures as a result of inversion of the
conductivity type in porous silicon nanocrystals under the influence of adsorption of
molecular iodine
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| ISSN: | 1560-8034 |