Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Current-voltage characteristics, spectral dependences of photovoltage and
 short-circuit current of the structures based on porous silicon at adsorption of iodine
 molecules are presented. It is revealed widening the spectral range of photosensitivity in
 the samples in short...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118731 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730785798225920 |
|---|---|
| author | Olenych, І.B. |
| author_facet | Olenych, І.B. |
| citation_txt | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Current-voltage characteristics, spectral dependences of photovoltage and
short-circuit current of the structures based on porous silicon at adsorption of iodine
molecules are presented. It is revealed widening the spectral range of photosensitivity in
the samples in short-wavelength range as compared with that of single crystal silicon.
Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has
been investigated. The results are explained in the frame of qualitative model that
involves formation of p-n-transitions in these structures as a result of inversion of the
conductivity type in porous silicon nanocrystals under the influence of adsorption of
molecular iodine
|
| first_indexed | 2025-12-07T19:22:43Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118731 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:22:43Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Olenych, І.B. 2017-05-31T05:26:19Z 2017-05-31T05:26:19Z 2012 Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 73.50.Pz, 73.63.-b https://nasplib.isofts.kiev.ua/handle/123456789/118731 Current-voltage characteristics, spectral dependences of photovoltage and
 short-circuit current of the structures based on porous silicon at adsorption of iodine
 molecules are presented. It is revealed widening the spectral range of photosensitivity in
 the samples in short-wavelength range as compared with that of single crystal silicon.
 Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has
 been investigated. The results are explained in the frame of qualitative model that
 involves formation of p-n-transitions in these structures as a result of inversion of the
 conductivity type in porous silicon nanocrystals under the influence of adsorption of
 molecular iodine The author thanks to Prof. L.S. Monastyrskii, Dr.
 B.S. Sokolovskii and Prof. O.I. Aksimentyeva for
 discussion of the results en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates Article published earlier |
| spellingShingle | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates Olenych, І.B. |
| title | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_full | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_fullStr | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_full_unstemmed | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_short | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_sort | electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118731 |
| work_keys_str_mv | AT olenychíb electricalandphotoelectricalpropertiesofiodinemodifiedporoussilicononsiliconsubstrates |