Two-dimensional modeling the static parameters for a submicron field-effect transistor
A comparison of two different models for simulation of submicron GaAs
 MESFETs static characteristics has been made. A new two-dimensional numerical model
 is presented to investigate the submicron field-effect transistor characteristics, the
 influence of the geometry of the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118847 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Two-dimensional modeling the static parameters
 for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. |