Two-dimensional modeling the static parameters for a submicron field-effect transistor
A comparison of two different models for simulation of submicron GaAs
 MESFETs static characteristics has been made. A new two-dimensional numerical model
 is presented to investigate the submicron field-effect transistor characteristics, the
 influence of the geometry of the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2009 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118847 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Two-dimensional modeling the static parameters
 for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A comparison of two different models for simulation of submicron GaAs
MESFETs static characteristics has been made. A new two-dimensional numerical model
is presented to investigate the submicron field-effect transistor characteristics, the
influence of the geometry of the component, like the inter-electrode distance, on the
capacities. All simulation revealed the existence of a high contact electric field near the
gate, which creates a depopulated zone around the gate, but the preceding studies have
neglected the edge effects, which are very significant for the submicron MESFETs.
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| ISSN: | 1560-8034 |