Two-dimensional modeling the static parameters for a submicron field-effect transistor
A comparison of two different models for simulation of submicron GaAs
 MESFETs static characteristics has been made. A new two-dimensional numerical model
 is presented to investigate the submicron field-effect transistor characteristics, the
 influence of the geometry of the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2009 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118847 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Two-dimensional modeling the static parameters
 for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862734712327372800 |
|---|---|
| author | Zaabat, M. Draid, M. |
| author_facet | Zaabat, M. Draid, M. |
| citation_txt | Two-dimensional modeling the static parameters
 for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A comparison of two different models for simulation of submicron GaAs
MESFETs static characteristics has been made. A new two-dimensional numerical model
is presented to investigate the submicron field-effect transistor characteristics, the
influence of the geometry of the component, like the inter-electrode distance, on the
capacities. All simulation revealed the existence of a high contact electric field near the
gate, which creates a depopulated zone around the gate, but the preceding studies have
neglected the edge effects, which are very significant for the submicron MESFETs.
|
| first_indexed | 2025-12-07T19:44:41Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118847 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:44:41Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Zaabat, M. Draid, M. 2017-05-31T19:12:10Z 2017-05-31T19:12:10Z 2009 Two-dimensional modeling the static parameters
 for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 85.30.Tv https://nasplib.isofts.kiev.ua/handle/123456789/118847 A comparison of two different models for simulation of submicron GaAs
 MESFETs static characteristics has been made. A new two-dimensional numerical model
 is presented to investigate the submicron field-effect transistor characteristics, the
 influence of the geometry of the component, like the inter-electrode distance, on the
 capacities. All simulation revealed the existence of a high contact electric field near the
 gate, which creates a depopulated zone around the gate, but the preceding studies have
 neglected the edge effects, which are very significant for the submicron MESFETs. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Two-dimensional modeling the static parameters for a submicron field-effect transistor Article published earlier |
| spellingShingle | Two-dimensional modeling the static parameters for a submicron field-effect transistor Zaabat, M. Draid, M. |
| title | Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_full | Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_fullStr | Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_full_unstemmed | Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_short | Two-dimensional modeling the static parameters for a submicron field-effect transistor |
| title_sort | two-dimensional modeling the static parameters for a submicron field-effect transistor |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118847 |
| work_keys_str_mv | AT zaabatm twodimensionalmodelingthestaticparametersforasubmicronfieldeffecttransistor AT draidm twodimensionalmodelingthestaticparametersforasubmicronfieldeffecttransistor |