Two-dimensional modeling the static parameters for a submicron field-effect transistor

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2009
• Main Authors: Zaabat, M., Draid, M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118847
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Two-dimensional modeling the static parameters
 for a submicron field-effect transistor / M. Zaabat, M. Draid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 417-420. — Бібліогр.: 10 назв. — англ.

A comparison of two different models for simulation of submicron GaAs
 MESFETs static characteristics has been made. A new two-dimensional numerical model
 is presented to investigate the submicron field-effect transistor characteristics, the
 influence of the geometry of the...