Mapping between two models of etching process

We consider two models for the etching processes using numerical simulations based on cellular-automata
 discrete-lattice approach. In one model we use a uniform etching probability for each surface site. In another
 model the etching probability at a given site depends on the local...

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Bibliographic Details
Published in:Condensed Matter Physics
Date:2007
Main Authors: Patsahan, T., Taleb, A., Stafiej, J., Badiali, J.-P.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2007
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118950
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Mapping between two models of etching process / T. Patsahan, A. Taleb, J. Stafiej, J.-P. Badiali // Condensed Matter Physics. — 2007. — Т. 10, № 4(52). — С. 579-585. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine