Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices
The goal of this work is to determine the correlation of the strength of brittle amorphous nonmetallic materials with the defective surface layers and their physical properties. The defective surface layer of materials for optoelectronic and sensors devices consists of abundant structural near-su...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119047 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices / V.P. Maslov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 286-291. — Бібліогр.: 19 назв. — англ. |
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Maslov, V.P. 2017-06-03T04:42:07Z 2017-06-03T04:42:07Z 2008 Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices / V.P. Maslov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 286-291. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 42.70.-a, 42.87.-d, 62.20.Mk https://nasplib.isofts.kiev.ua/handle/123456789/119047 The goal of this work is to determine the correlation of the strength of brittle amorphous nonmetallic materials with the defective surface layers and their physical properties. The defective surface layer of materials for optoelectronic and sensors devices consists of abundant structural near-surface defects, which are displaced under action of constant load and thermal fluctuations, reducing the elasticity of the surface layer. Microcreep processes in tested materials can be described by a general equation that is known as the logarithmic microcreep equation. The applicability of this equation for tested optical materials is indicative of the generality of microcreep processes in crystalline and amorphous hard materials. For each grade of polished optical glass, a minimal residual defective layer exists. The parameters of this layer are interrelated with the mechanical properties of glass, such as microhardness and optical strain coefficient, and thermophysical properties, such as thermal diffusivity, sintering temperature, and annealing temperature. The greater are the values of these properties, the less is the concentration of disrupted interatomic bonds. Based on the test results, the corresponding equation, using the parameter E⋅a¹/², for determining the strength of optical silicate glass and glassceramic has been proposed. The author would like to thank Mrs. G.B. Kostenchuk for her assistance in the preparation of the manuscript en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices |
| spellingShingle |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices Maslov, V.P. |
| title_short |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices |
| title_full |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices |
| title_fullStr |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices |
| title_full_unstemmed |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices |
| title_sort |
effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices |
| author |
Maslov, V.P. |
| author_facet |
Maslov, V.P. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The goal of this work is to determine the correlation of the strength of brittle
amorphous nonmetallic materials with the defective surface layers and their physical
properties. The defective surface layer of materials for optoelectronic and sensors devices
consists of abundant structural near-surface defects, which are displaced under action of
constant load and thermal fluctuations, reducing the elasticity of the surface layer.
Microcreep processes in tested materials can be described by a general equation that is
known as the logarithmic microcreep equation. The applicability of this equation for
tested optical materials is indicative of the generality of microcreep processes in
crystalline and amorphous hard materials. For each grade of polished optical glass, a
minimal residual defective layer exists. The parameters of this layer are interrelated with
the mechanical properties of glass, such as microhardness and optical strain coefficient,
and thermophysical properties, such as thermal diffusivity, sintering temperature, and
annealing temperature. The greater are the values of these properties, the less is the
concentration of disrupted interatomic bonds. Based on the test results, the corresponding
equation, using the parameter E⋅a¹/², for determining the strength of optical silicate glass
and glassceramic has been proposed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119047 |
| citation_txt |
Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices / V.P. Maslov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 286-291. — Бібліогр.: 19 назв. — англ. |
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AT maslovvp effectofthestateofthesurfacelayersonthestrengthofmaterialsforoptoelectronicandsensorsdevices |
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2025-12-07T16:29:25Z |
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2025-12-07T16:29:25Z |
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