Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Babych, V.M., Luchkevych, M.M., Pavlovskyy, Yu.V., Tsmots, V.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119052
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ.

By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in “vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the presence of deep thermodonors with the ionization energy Еі ≥ 200 meV in these samples contributes to the appearance of a paramagnetic constituent with the magnetic susceptibility (χ par) even at 300 K. χ par in this material does not depend on temperature in the range of 77 - 300 K that can testify on the Van-Fleck origin of this magnetic susceptibility component. Absence of nonlinearities in the dependence χ(H) within the interval 0.3-4 kOe shows uncooperative character of magnetism found out.