Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
A solution growth system has been built based on temperature reduction
 method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
 dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
 crystals show about 86 % transmission in the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119058 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ. |