Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
A solution growth system has been built based on temperature reduction
 method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
 dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
 crystals show about 86 % transmission in the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119058 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A solution growth system has been built based on temperature reduction
method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
crystals show about 86 % transmission in the visible region. XRD analysis, laser damage
threshold, and microhardness of the crystals were determined. The etching behavior of
surface features of grown KDP single crystals was studied in different etchants.
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| ISSN: | 1560-8034 |