Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
A solution growth system has been built based on temperature reduction
 method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
 dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
 crystals show about 86 % transmission in the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119058 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862700378772996096 |
|---|---|
| author | Javidi, S. Faripour, H. Esmaeil Nia, M. Sepehri, K.F. Ali Akbari, N. |
| author_facet | Javidi, S. Faripour, H. Esmaeil Nia, M. Sepehri, K.F. Ali Akbari, N. |
| citation_txt | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A solution growth system has been built based on temperature reduction
method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
crystals show about 86 % transmission in the visible region. XRD analysis, laser damage
threshold, and microhardness of the crystals were determined. The etching behavior of
surface features of grown KDP single crystals was studied in different etchants.
|
| first_indexed | 2025-12-07T16:39:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119058 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:39:12Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Javidi, S. Faripour, H. Esmaeil Nia, M. Sepehri, K.F. Ali Akbari, N. 2017-06-03T04:50:29Z 2017-06-03T04:50:29Z 2008 Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 42.70.Mp, 77.84.Fa, 81.10.Dn https://nasplib.isofts.kiev.ua/handle/123456789/119058 A solution growth system has been built based on temperature reduction
 method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
 dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
 crystals show about 86 % transmission in the visible region. XRD analysis, laser damage
 threshold, and microhardness of the crystals were determined. The etching behavior of
 surface features of grown KDP single crystals was studied in different etchants. The authors are indebted to Dr. M. Maleki for his helpful
 advices concerning the reviewing of this article, they
 also wish to thank V. Faghihi on aspects of the laser
 damage threshold experiment, Z. Dorriz for providing
 spectral curve, N. Afshari for providing XRD curve,
 H. Kalbasi for making microhardeness testing, and
 workshop personnel for their technical assistance. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Development of a KDP crystal growth system based on TRM and characterization of the grown crystals Article published earlier |
| spellingShingle | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals Javidi, S. Faripour, H. Esmaeil Nia, M. Sepehri, K.F. Ali Akbari, N. |
| title | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals |
| title_full | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals |
| title_fullStr | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals |
| title_full_unstemmed | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals |
| title_short | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals |
| title_sort | development of a kdp crystal growth system based on trm and characterization of the grown crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119058 |
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