Development of a KDP crystal growth system based on TRM and characterization of the grown crystals

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автори: Javidi, S., Faripour, H., Esmaeil Nia, M., Sepehri, K.F., Ali Akbari, N.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119058
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ.

A solution growth system has been built based on temperature reduction method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm dimensions. Spectrophotometer transmission spectra from (100) planes of the grown crystals show about 86 % transmission in the visible region. XRD anal...