Klad'ko, V. P., Grigoriev, D., Datsenko, L., Machulin, V., & Prokopenko, I. (1999). Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Klad'ko, V. P., D.O Grigoriev, L.I Datsenko, V.F Machulin, та I.V Prokopenko. "Influence of Absorption Level on Mechanisms of Braggdiffracted X-ray Beam Formation in Real Silicon Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.
Стиль цитування MLA (8-ме видання)Klad'ko, V. P., et al. "Influence of Absorption Level on Mechanisms of Braggdiffracted X-ray Beam Formation in Real Silicon Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.