Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals

The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanis...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1999
Main Authors: Klad'ko, V. P., Grigoriev, D.O., Datsenko, L.I., Machulin, V.F., Prokopenko, I.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119062
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119062
record_format dspace
spelling Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
2017-06-03T04:54:58Z
2017-06-03T04:54:58Z
1999
Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ.
1560-8034
PACS 81.40.-Z,61.66.Bi
https://nasplib.isofts.kiev.ua/handle/123456789/119062
The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanisms of profile formation of a spatial intensity distribution of diffracted beams depending on an energy of radiation and on structural perfection parameters of crystals are discussed. The formulae for an analytical description of spatial intensity distribution profiles which take into account the dynamical corrections (coefficients of extinction) for coherent and incoherent components of the total reflectivity were used.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
spellingShingle Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
title_short Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_full Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_fullStr Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_full_unstemmed Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
title_sort influence of absorption level on mechanisms of braggdiffracted x-ray beam formation in real silicon crystals
author Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
author_facet Klad'ko, V. P.
Grigoriev, D.O.
Datsenko, L.I.
Machulin, V.F.
Prokopenko, I.V.
publishDate 1999
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanisms of profile formation of a spatial intensity distribution of diffracted beams depending on an energy of radiation and on structural perfection parameters of crystals are discussed. The formulae for an analytical description of spatial intensity distribution profiles which take into account the dynamical corrections (coefficients of extinction) for coherent and incoherent components of the total reflectivity were used.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119062
citation_txt Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ.
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AT datsenkoli influenceofabsorptionlevelonmechanismsofbraggdiffractedxraybeamformationinrealsiliconcrystals
AT machulinvf influenceofabsorptionlevelonmechanismsofbraggdiffractedxraybeamformationinrealsiliconcrystals
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first_indexed 2025-12-07T16:38:51Z
last_indexed 2025-12-07T16:38:51Z
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