Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals
The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanis...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119062 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862700379504902144 |
|---|---|
| author | Klad'ko, V. P. Grigoriev, D.O. Datsenko, L.I. Machulin, V.F. Prokopenko, I.V. |
| author_facet | Klad'ko, V. P. Grigoriev, D.O. Datsenko, L.I. Machulin, V.F. Prokopenko, I.V. |
| citation_txt | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanisms of profile formation of a spatial intensity distribution of diffracted beams depending on an energy of radiation and on structural perfection parameters of crystals are discussed. The formulae for an analytical description of spatial intensity distribution profiles which take into account the dynamical corrections (coefficients of extinction) for coherent and incoherent components of the total reflectivity were used.
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| first_indexed | 2025-12-07T16:38:51Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119062 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:38:51Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Klad'ko, V. P. Grigoriev, D.O. Datsenko, L.I. Machulin, V.F. Prokopenko, I.V. 2017-06-03T04:54:58Z 2017-06-03T04:54:58Z 1999 Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals / V.P. Klad'ko, D.O. Grigoriev, L.I. Datsenko, V.F. Machulin, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 157-162. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 81.40.-Z,61.66.Bi https://nasplib.isofts.kiev.ua/handle/123456789/119062 The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the Bragg diffraction in conditions of a strong and weak absorption. The mechanisms of profile formation of a spatial intensity distribution of diffracted beams depending on an energy of radiation and on structural perfection parameters of crystals are discussed. The formulae for an analytical description of spatial intensity distribution profiles which take into account the dynamical corrections (coefficients of extinction) for coherent and incoherent components of the total reflectivity were used. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals Article published earlier |
| spellingShingle | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals Klad'ko, V. P. Grigoriev, D.O. Datsenko, L.I. Machulin, V.F. Prokopenko, I.V. |
| title | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals |
| title_full | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals |
| title_fullStr | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals |
| title_full_unstemmed | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals |
| title_short | Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals |
| title_sort | influence of absorption level on mechanisms of braggdiffracted x-ray beam formation in real silicon crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119062 |
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