Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix
The results of experimental researches of photoluminescence (PL) spectra in
 Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures
 with high-temperature (1100 °C) and following low-temperature annealings in various
 regimes are given. We ha...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119068 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862548069580537856 |
|---|---|
| author | Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. |
| author_facet | Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. |
| citation_txt | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of experimental researches of photoluminescence (PL) spectra in
Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures
with high-temperature (1100 °C) and following low-temperature annealings in various
regimes are given. We have found that additional low-temperature treatments in definite
regimes result in substantial increase of the PL intensity, thus a maximum effect is
observed after annealing in air. The possible mechanisms of the obtained effects are
discussed. Those are based on supposition about the dominating contribution of
luminescence through the electronic states on SiO₂-Si nanoclaster interfaces, which is
related to defect and impurity complexes. It has been shown that growth of the PL
intensity is governed by two effects: generation of new centers of radiative
recombination on the nanocrystal-dielectric matrix interfaces, and passivation of nonradiative
recombination centers.
|
| first_indexed | 2025-11-25T18:24:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119068 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T18:24:26Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. 2017-06-03T05:01:54Z 2017-06-03T05:01:54Z 2008 Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 61.72.T, 78.55.M https://nasplib.isofts.kiev.ua/handle/123456789/119068 The results of experimental researches of photoluminescence (PL) spectra in
 Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures
 with high-temperature (1100 °C) and following low-temperature annealings in various
 regimes are given. We have found that additional low-temperature treatments in definite
 regimes result in substantial increase of the PL intensity, thus a maximum effect is
 observed after annealing in air. The possible mechanisms of the obtained effects are
 discussed. Those are based on supposition about the dominating contribution of
 luminescence through the electronic states on SiO₂-Si nanoclaster interfaces, which is
 related to defect and impurity complexes. It has been shown that growth of the PL
 intensity is governed by two effects: generation of new centers of radiative
 recombination on the nanocrystal-dielectric matrix interfaces, and passivation of nonradiative
 recombination centers. This work was supported by the MES of Ukraine (Grant
 # M/175-2007). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix Article published earlier |
| spellingShingle | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix Khatsevich, I. Melnik, V. Popov, V. Romanyuk, B. Fedulov, V. |
| title | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_full | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_fullStr | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_full_unstemmed | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_short | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix |
| title_sort | effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized si nanocrystals in sio₂ matrix |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119068 |
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