The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The adsorboelectric effect arising in multilayered semiconductor structures
based on the porous Si with catalytically active Pd electrodes due to action of low
concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
studied. The kinetic dependences of the change in output signals of the samples upon
action of different concentrations of gas molecules are studied using the capacitancevoltage
characteristic method. The isotherms of adsorption are derived. A physical model
of the adsorption of hydrogen containing gases in these structures is proposed to explain
the observed phenomena. |
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