The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
The adsorboelectric effect arising in multilayered semiconductor structures
 based on the porous Si with catalytically active Pd electrodes due to action of low
 concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
 studied. The kinetic dependences...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862548975588999168 |
|---|---|
| author | Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. |
| author_facet | Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. |
| citation_txt | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The adsorboelectric effect arising in multilayered semiconductor structures
based on the porous Si with catalytically active Pd electrodes due to action of low
concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
studied. The kinetic dependences of the change in output signals of the samples upon
action of different concentrations of gas molecules are studied using the capacitancevoltage
characteristic method. The isotherms of adsorption are derived. A physical model
of the adsorption of hydrogen containing gases in these structures is proposed to explain
the observed phenomena.
|
| first_indexed | 2025-11-25T20:35:27Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119080 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T20:35:27Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. 2017-06-03T05:12:45Z 2017-06-03T05:12:45Z 2008 The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 07.07.Df, 68.43.Bc, 68.47.Fg https://nasplib.isofts.kiev.ua/handle/123456789/119080 The adsorboelectric effect arising in multilayered semiconductor structures
 based on the porous Si with catalytically active Pd electrodes due to action of low
 concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
 studied. The kinetic dependences of the change in output signals of the samples upon
 action of different concentrations of gas molecules are studied using the capacitancevoltage
 characteristic method. The isotherms of adsorption are derived. A physical model
 of the adsorption of hydrogen containing gases in these structures is proposed to explain
 the observed phenomena. This work was supported by Science and
 Technology Centre in Ukraine, Project № 3819, by
 National Academy of science, Project № 51 and № 25-
 2008, by Ministry of Science and Еducation, Project №
 M175-2007. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers Article published earlier |
| spellingShingle | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. |
| title | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_full | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_fullStr | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_full_unstemmed | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_short | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_sort | influence of h₂s and h₂ adsorption on characteristics of mis structures with si porous layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
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