The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
The adsorboelectric effect arising in multilayered semiconductor structures
 based on the porous Si with catalytically active Pd electrodes due to action of low
 concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
 studied. The kinetic dependences...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |