Peculiarities of charge carriers transport in submicron Si-Ge whiskers

• Datum: 2014
• Hauptverfasser: Druzhinin, A.A., Dolgolenko, A.P., Ostrovskii, I.P., Khoverko, Yu.N., Nichkalo, S.I., Kogut, Iu.R.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2014
• Schriftenreihe: Functional Materials
• Schlagworte: Characterization and properties
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119084
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Peculiarities of charge carriers transport in submicron Si-Ge whiskers / A.A.Druzhinin, A.P.Dolgolenko, I.P.Ostrovskii, Yu.N.Khoverko, S.I.Nichkalo, Iu.R.Kogut // Functional Materials. — 2015. — Т. 22, № 1. — С. 27-33. — Бібліогр.: 18 назв. — англ.

The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy for conduction submicron designs was estimated and compared with the ones for...