Peculiarities of charge carriers transport in submicron Si-Ge whiskers
The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy for conduction submicron designs was estimated and compared with the ones for...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119084 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of charge carriers transport in submicron Si-Ge whiskers / A.A.Druzhinin, A.P.Dolgolenko, I.P.Ostrovskii, Yu.N.Khoverko, S.I.Nichkalo, Iu.R.Kogut // Functional Materials. — 2015. — Т. 22, № 1. — С. 27-33. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862576086061154304 |
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| author | Druzhinin, A.A. Dolgolenko, A.P. Ostrovskii, I.P. Khoverko, Yu.N. Nichkalo, S.I. Kogut, Iu.R. |
| author_facet | Druzhinin, A.A. Dolgolenko, A.P. Ostrovskii, I.P. Khoverko, Yu.N. Nichkalo, S.I. Kogut, Iu.R. |
| citation_txt | Peculiarities of charge carriers transport in submicron Si-Ge whiskers / A.A.Druzhinin, A.P.Dolgolenko, I.P.Ostrovskii, Yu.N.Khoverko, S.I.Nichkalo, Iu.R.Kogut // Functional Materials. — 2015. — Т. 22, № 1. — С. 27-33. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy for conduction submicron designs was estimated and compared with the ones for micron-scale crystals. It is shown that the activation energy of ground state ε1 of boron impurity for the Si-Ge whiskers with a diameter of 200 nm is 29.6 meV, which is typical for the bulk materials, whereas ε₂ was 3.2 meV. It is suggested that the unusual high value of ε₂ caused by inhomogeneous stress at the interface between the core and nanoporous shell of the submicron whisker due to their lattice mismatch. This effect can be used to create gauges with a thermoelectric principle of operation for cryogenic temperatures.
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| first_indexed | 2025-11-26T14:23:58Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119084 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-26T14:23:58Z |
| publishDate | 2014 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Druzhinin, A.A. Dolgolenko, A.P. Ostrovskii, I.P. Khoverko, Yu.N. Nichkalo, S.I. Kogut, Iu.R. 2017-06-03T18:59:00Z 2017-06-03T18:59:00Z 2014 Peculiarities of charge carriers transport in submicron Si-Ge whiskers / A.A.Druzhinin, A.P.Dolgolenko, I.P.Ostrovskii, Yu.N.Khoverko, S.I.Nichkalo, Iu.R.Kogut // Functional Materials. — 2015. — Т. 22, № 1. — С. 27-33. — Бібліогр.: 18 назв. — англ. 1027-5495 DOI: http://dx.doi.org/10.15407/fm22.01.027 https://nasplib.isofts.kiev.ua/handle/123456789/119084 The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy for conduction submicron designs was estimated and compared with the ones for micron-scale crystals. It is shown that the activation energy of ground state ε1 of boron impurity for the Si-Ge whiskers with a diameter of 200 nm is 29.6 meV, which is typical for the bulk materials, whereas ε₂ was 3.2 meV. It is suggested that the unusual high value of ε₂ caused by inhomogeneous stress at the interface between the core and nanoporous shell of the submicron whisker due to their lattice mismatch. This effect can be used to create gauges with a thermoelectric principle of operation for cryogenic temperatures. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Peculiarities of charge carriers transport in submicron Si-Ge whiskers Article published earlier |
| spellingShingle | Peculiarities of charge carriers transport in submicron Si-Ge whiskers Druzhinin, A.A. Dolgolenko, A.P. Ostrovskii, I.P. Khoverko, Yu.N. Nichkalo, S.I. Kogut, Iu.R. Characterization and properties |
| title | Peculiarities of charge carriers transport in submicron Si-Ge whiskers |
| title_full | Peculiarities of charge carriers transport in submicron Si-Ge whiskers |
| title_fullStr | Peculiarities of charge carriers transport in submicron Si-Ge whiskers |
| title_full_unstemmed | Peculiarities of charge carriers transport in submicron Si-Ge whiskers |
| title_short | Peculiarities of charge carriers transport in submicron Si-Ge whiskers |
| title_sort | peculiarities of charge carriers transport in submicron si-ge whiskers |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119084 |
| work_keys_str_mv | AT druzhininaa peculiaritiesofchargecarrierstransportinsubmicronsigewhiskers AT dolgolenkoap peculiaritiesofchargecarrierstransportinsubmicronsigewhiskers AT ostrovskiiip peculiaritiesofchargecarrierstransportinsubmicronsigewhiskers AT khoverkoyun peculiaritiesofchargecarrierstransportinsubmicronsigewhiskers AT nichkalosi peculiaritiesofchargecarrierstransportinsubmicronsigewhiskers AT kogutiur peculiaritiesofchargecarrierstransportinsubmicronsigewhiskers |