Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering

• Опубліковано в: : Functional Materials
• Дата: 2014-12-12
• Автори: Pidkova, V., Brodnikovska, I., Duriagina, Z., Petrovskyy, V.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2014-12-12
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119115
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ.

Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact forma...