Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact forma...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2014-12-12 |
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| Format: | Artikel |
| Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2014-12-12
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119115 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. |
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Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. 2017-06-04T13:48:57Z 2017-06-04T13:48:57Z 2014-12-12 Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. 1027-5495 DOI: http://dx.doi.org/10.15407/fm22.01.034 https://nasplib.isofts.kiev.ua/handle/123456789/119115 Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| spellingShingle |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. Characterization and properties |
| title_short |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_full |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_fullStr |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_full_unstemmed |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_sort |
structure and properties of mg, al, ti oxide and nitride layers formed by ion-plasma sputtering |
| author |
Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. |
| author_facet |
Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2014-12-12 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119115 |
| citation_txt |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. |
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| first_indexed |
2025-11-29T05:03:57Z |
| last_indexed |
2025-11-29T05:03:57Z |
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