Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass
In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform...
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| Дата: | 2004 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Цитувати: | Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1192252025-02-09T14:27:22Z Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass Mateleshko, N. Mitsa, V. Stronski, A. Veres, M. Koos, M. Andriesh, A.M. In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the optical gap indicate photomodification of the structure of As₂S₃ glass and fiber based on it. 2004 Article Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 61.43.Dq; 78.30.Ly https://nasplib.isofts.kiev.ua/handle/123456789/119225 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the optical gap indicate photomodification of the structure of As₂S₃ glass and fiber based on it. |
| format |
Article |
| author |
Mateleshko, N. Mitsa, V. Stronski, A. Veres, M. Koos, M. Andriesh, A.M. |
| spellingShingle |
Mateleshko, N. Mitsa, V. Stronski, A. Veres, M. Koos, M. Andriesh, A.M. Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Mateleshko, N. Mitsa, V. Stronski, A. Veres, M. Koos, M. Andriesh, A.M. |
| author_sort |
Mateleshko, N. |
| title |
Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass |
| title_short |
Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass |
| title_full |
Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass |
| title_fullStr |
Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass |
| title_full_unstemmed |
Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass |
| title_sort |
nano-sized phase inclusions in as₂s₃ glass, films and fibers based on this glass |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
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https://nasplib.isofts.kiev.ua/handle/123456789/119225 |
| citation_txt |
Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT mateleshkon nanosizedphaseinclusionsinas2s3glassfilmsandfibersbasedonthisglass AT mitsav nanosizedphaseinclusionsinas2s3glassfilmsandfibersbasedonthisglass AT stronskia nanosizedphaseinclusionsinas2s3glassfilmsandfibersbasedonthisglass AT veresm nanosizedphaseinclusionsinas2s3glassfilmsandfibersbasedonthisglass AT koosm nanosizedphaseinclusionsinas2s3glassfilmsandfibersbasedonthisglass AT andriesham nanosizedphaseinclusionsinas2s3glassfilmsandfibersbasedonthisglass |
| first_indexed |
2025-11-26T20:20:00Z |
| last_indexed |
2025-11-26T20:20:00Z |
| _version_ |
1849885618442600448 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 462-464.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
462
PACS: 61.43.Dq; 78.30.Ly
Nano-sized phase inclusions in As2S3 glass, films
and fibers based on this glass
N. Mateleshko1, V. Mitsa1, A. Stronski2, M. Veres3, M. Koos3, A.M. Andriesh4
1 Uzhgorod National University, 32, Voloshina str., Uzhgorod, Ukraine
E-mail: mitsa@univ.uzhgorod.ua
2 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028, Ukraine
3 Academy of Sciences of Hungary, Institute of Solid State Physics and Optics
4 Academy of Sciences of Moldova
Abstract. In this report, the comparative analysis using Raman spectroscopy of the
short-range order in amorphous As2S3 films deposited with different evaporation rates,
volume glass and fiber based on this glass is presented. With increasing the film
deposition rate, their structure becomes more non-uniform as compared to that of glass.
Raman spectra excited by laser radiation with energy bigger than the width of the
optical gap indicate photomodification of the structure of As2S3 glass and fiber based
on it.
Keywords: Raman spectra; As2S3 films, glass and fiber; nano-sized phase inclusions.
Manuscript received 26.11.04; accepted for publication 16.12.04.
1. Introduction
Phase inclusions is the term that describes initially
homogeneous system, in which two or more chemically
or structurally different components or phases are
distributed. Phase inclusions is the feature inherent to
many vitreous systems that can exist in different scales
from nanometers up to microns or even millimeters [1].
For practical application of glasses as optoelectronics
materials, it is important to exclude or minimize phase
inclusions up to the scale smaller than the operation light
wavelength.
Raman spectroscopy deals with non-elastic light
scattering by the substances exposed with intensive laser
sources. The structure of amorphous materials is
characterized by the wide distribution of bond lengths,
angles between them and, respectively, different
energies. Due to this, the Raman spectrum will be more
“diffused” as compared to the crystalline one.
In the present report, presented is a comparative
analysis of the short order in amorphous As2S3 (a-As2S3)
films produced with different evaporation rates, volume
glass and fiber on its base.
2. Experiment
Raman spectra of the films were excited by laser
radiation with 632.8 nm wavelength, Raman spectra of
the glasses and fibers by emission lines 785 and 488 nm
(when using the first wavelength, the beam was directed
into the fiber, in the second case – onto the surface).
Spectra were registered using the micro-Raman
RENISHAW SYSTEM 1000 with the CCD (Charge
Coupling Device) camera. The power of used laser
radiation was limited by filters in order to avoid
photoinduced transformations.
3. Results and discussion
At low deposition rates V < 20 Å/s, the difference of
Raman spectra of a-As2S3 films and g-As2S3 (Fig. 2,
curves 2 and 3) is in transformation of the shape of film
spectrum and appearance of the intensive bands near 190
and 230 cm–1, which are characteristic for vibrations of
As–As bonds in As2S4/2 structural units (s.u.). But the
band near 230 cm–1 is revealed also in the Raman
spectrum of а-As (Fig. 1), that is, it is characteristic for
the As–As bonds vibrations in As3/3 s.u. Consequently,
unambiguous determination of the s.u. using the only
Raman data is difficult. The growth of the film
deposition rate results in appearance and growth of the
intensity of the band peaking at 270 cm–1, which is
characteristic for As4S3 s.u. vibrations (Fig. 2).
Our structural interpretation of Raman spectra of
As2S3 films has shown that with the growth of the
deposition rate the film structure becomes more
heterogeneous than that for glass, besides AsS3/2
pyramids, the As–As bonds in As4S4, As4S3, As3/3
“molecules” can be present.
Despite undertaken by us measures on the decrease
of the share of nano-sized phase inclusions in g-As2S3
(change of the melt temperature from which the cooling
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 462-464.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
463
Fig. 1. Raman spectra of As2S3 films (1 – deposition rate
V < 20 Å/s, 2 – V = 20 Å/s, 3 – V > 20 Å/s) and amorphous As
(4). Spectra are vertically shifted for convenience.
Fig. 2. Raman spectra: 1 – As2S3 glass (λ = 785 nm), 2 – As2S3
glass (λ = 488 nm), 3 – As2S3 fiber (λ = 785 nm), 4 – As2S3
fiber (λ = 488 nm).
started, cooling rate), in Raman spectra bands near 189,
230, and 360 cm–1 are always present, which can testify
on the presence of As2S4/2 s.u. in the glass.
The Raman spectrum of the core of As2S3 fiber
measured using 785 nm laser excitation wavelength has
more intensive band near 230 cm–1 than the similar
Raman band of the glass measured using the same
excitation wavelength. In the Raman spectrum of the
fiber core (Fig. 2) the peak near 190 cm–1 almost
disappears, that is, As2/3 s.u. are dominant in the
structure of the fiber surface and not the As2S4/2 ones as
in the case of the glass. The Raman spectrum of the fiber
in the region ν > 400 cm–1 (Fig. 2, curves 3, 4) has more
intensive bands than those of the glass (Fig. 2, curves 1,
2), which points to the enrichment of the fiber surface by
sulfur.
If chalcogenides are exposed by a laser radiation
from the region of intrinsic absorption edge, incident
photons are absorbed by the glass. That is, at exposure
with photons of the energy bigger than the bandgap
width (bandgap width of As2S3 Eg ~ 2.4 eV), the
activation of the photoinduced phenomena on the
surface and in subsurface layers occurs [2].
Let us analyze the spectra of As2S3 glasses and fibers
excited by the laser emission of a bigger energy (shorter
light wavelength).
It can be seen from Fig. 2 that, at excitation of
Raman spectra of As2S3 glasses with the energy bigger
than the bandgap width (λ = 488 nm, Е = 2.54 eV),
widening all the bands is observed, the intensity increase
of the band near 230 cm–1 and Raman bands in the
region v > 400 cm-1. The intensity growth of the band
near 230 cm–1 with a simultaneous decrease of the
maximum near 190 cm–1 can testify on the presence of
free arsenic clusters as a result of the
photodecomposition reaction [3]:
3y232 SAsyAsSAs −+→ .
Besides that, under the influence of laser radiation the
following reaction is possible [4]:
34324s S2AsS2AsS3As +→ .
The presence of the kinks in the region 400…500 cm–1
similar to those in the spectrum of As2S3 glass as well as
in the spectrum of fibers on its base testifies on the
sulfur formation in various forms in the matrix of the
glass structure. It is necessary to note that the penetration
depth of the laser radiation with Е = 2.54 eV is about
~ 1 μm, that is photomodification of the structure
proceeds at the surface.
4. Conclusions
1. Our structural interpretation of the Raman spectra of
As2S3 films (Fig. 2) has shown that with the increase
of the deposition rate the film structure is more
heterogeneous than that of the glass. Besides AsS3/2
pyramids, in the film As–As bonds in As4S4, As4S3,
As3/3 “molecules” can be present.
2. The Raman spectrum of the core surface of As2S3
fiber in comparison to the structure of As2S3 glass
testifies on the presence of bigger As3/3 concentration
and not the As2S4/2 s.u. Raman spectra excited by the
laser with the photon energy higher than the bandgap
width, testify on the photomodification of the surface
of As2S3 glass and fiber made on its base.
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 462-464.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
464
The investigations were carried out with the support
of the grant of Ukrainian-Hungarian cooperation М/467-
2003.
References
1. W. Vogel, Chemistry of Glass , The American
Ceramic Society, Westerville, OH (1985).
2. V.M. Mitsa, Vibration spectra and structural
correlations in non-oxygen alloys, Кiev, UMK, VO
(1992).
3. K. Tanaka, H. Hisakuni, Photoinduced phenomena in
As2S3 glass under sub-bandgap excitation // J. Non-
Cryst. Solids 198-200, p. 714-718 (1996).
4. S.A. Keneman, J. Bordogna and J.N. Zemel,
Evaporated films of arsenic trisulfide: Physical
model of effects of light exposure and heat cycling //
J. Appl. Phys. 49, p. 4663-4673 (1978).
5. Von W. Bues, M. Somer, W. Brockner,
Schwingungsspektren von As4S4 und As4Se4 // Z.
Anorg. allg. Chem. 499, p. 7-14 (1983).
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