Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation
Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. Photoluminescence spectra were obtained at low temperatures at the variou...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119229 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation / A. Mahdjoub, H. Bouredoucen, A. Djelloul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 436-440. — Бібліогр.: 16 назв. — англ. |