Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation
Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. Photoluminescence spectra were obtained at low temperatures at the variou...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119229 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation / A. Mahdjoub, H. Bouredoucen, A. Djelloul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 436-440. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862739288615026688 |
|---|---|
| author | Mahdjoub, A. Bouredoucen, H. Djelloul, A. |
| author_facet | Mahdjoub, A. Bouredoucen, H. Djelloul, A. |
| citation_txt | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation / A. Mahdjoub, H. Bouredoucen, A. Djelloul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 436-440. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. Photoluminescence spectra were obtained at low temperatures at the various stages of MIS-InP structure formation. At ambient temperature, photoluminescence topography made it possible to characterize the surface state after each technological stage. The interface degradation under the effect of repeated annealing is insignificant up to the temperatures close to 350 °C. Major radiative defects detected using photoluminescence spectrum with energies ranged from 0.95 to 1.15 eV were attributed to the impurity complexes of phosphorus vacancies, concentration of which is substantially reduced in the presence of
anodic oxide.
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| first_indexed | 2025-12-07T20:08:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119229 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:08:45Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mahdjoub, A. Bouredoucen, H. Djelloul, A. 2017-06-05T14:30:21Z 2017-06-05T14:30:21Z 2004 Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation / A. Mahdjoub, H. Bouredoucen, A. Djelloul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 436-440. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 42.79.Wc, 78.20.-e, 71.55.Eq, 73.20.-r, 78.55.-m https://nasplib.isofts.kiev.ua/handle/123456789/119229 Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. Photoluminescence spectra were obtained at low temperatures at the various stages of MIS-InP structure formation. At ambient temperature, photoluminescence topography made it possible to characterize the surface state after each technological stage. The interface degradation under the effect of repeated annealing is insignificant up to the temperatures close to 350 °C. Major radiative defects detected using photoluminescence spectrum with energies ranged from 0.95 to 1.15 eV were attributed to the impurity complexes of phosphorus vacancies, concentration of which is substantially reduced in the presence of
 anodic oxide. We would like to thank the research groups of Prof. J. Joseph and Prof. S.K. Krawczyk of ECLyon for their assistance in accomplishing this work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation Article published earlier |
| spellingShingle | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation Mahdjoub, A. Bouredoucen, H. Djelloul, A. |
| title | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation |
| title_full | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation |
| title_fullStr | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation |
| title_full_unstemmed | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation |
| title_short | Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation |
| title_sort | photoluminescence characterization of al/al₂o₃/inp mis structures passivated by anodic oxidation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119229 |
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