Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Mahdjoub, A., Bouredoucen, H., Djelloul, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119229
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation / A. Mahdjoub, H. Bouredoucen, A. Djelloul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 436-440. — Бібліогр.: 16 назв. — англ.

Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. Photoluminescence spectra were obtained at low temperatures at the variou...