Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2001
• Main Authors: Vlasenko, N.A., Kononets, Ya.F., Denisova, Z.L., Kopytko, Yu.V., Veligura, L.I., Soininen, El., Tornqvist, R.O., Vasama, K.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119240
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes / N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tornqvist, K.M. Vasama // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 48-55. — Бібліогр.: 13 назв. — англ.

Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential differences have been revealed. They are explained in assumption that different impurity centers exist in the ZnS:Mn films grown by using chlorine and metalorganic precursors, namely, MnCl₂, Cli⁻, Cls⁺ and isovalent oxygen traps, respectively. The mechanism of aging in both types of devices is discussed.