Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• 1. Verfasser: Stronski, A.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119254
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers / A.V. Stronski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 111-117. — Бібліогр.: 37 назв. — англ.

The present paper is concerned with the peculiarities of the mechanism of irreversible photostructural transformations in As-S-Se layers. The starting point of the irreversible photostructural transformations is the state which is determined by the conditions of the fabrication of the As-S-Se layers...