Bolometric characteristics of macroporous silicon structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Karachevtseva, L.A., Lytvynenko, O.A., Malovichko, E.A., Sobolev, V.D., Stronska, O.J.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119270
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ.

Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1-4%), low noise level (2*10⁻⁹ VHz⁻¹/²) and good radiation absorption in the operation spectral region.