Bolometric characteristics of macroporous silicon structures
Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporou...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119270 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119270 |
|---|---|
| record_format |
dspace |
| spelling |
Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. 2017-06-05T17:16:33Z 2017-06-05T17:16:33Z 2001 Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60Cp https://nasplib.isofts.kiev.ua/handle/123456789/119270 Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1-4%), low noise level (2*10⁻⁹ VHz⁻¹/²) and good radiation absorption in the operation spectral region. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Bolometric characteristics of macroporous silicon structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Bolometric characteristics of macroporous silicon structures |
| spellingShingle |
Bolometric characteristics of macroporous silicon structures Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| title_short |
Bolometric characteristics of macroporous silicon structures |
| title_full |
Bolometric characteristics of macroporous silicon structures |
| title_fullStr |
Bolometric characteristics of macroporous silicon structures |
| title_full_unstemmed |
Bolometric characteristics of macroporous silicon structures |
| title_sort |
bolometric characteristics of macroporous silicon structures |
| author |
Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| author_facet |
Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| publishDate |
2001 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1-4%), low noise level (2*10⁻⁹ VHz⁻¹/²) and good radiation absorption in the operation spectral region.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119270 |
| citation_txt |
Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT karachevtsevala bolometriccharacteristicsofmacroporoussiliconstructures AT lytvynenkooa bolometriccharacteristicsofmacroporoussiliconstructures AT malovichkoea bolometriccharacteristicsofmacroporoussiliconstructures AT sobolevvd bolometriccharacteristicsofmacroporoussiliconstructures AT stronskaoj bolometriccharacteristicsofmacroporoussiliconstructures |
| first_indexed |
2025-12-07T19:21:17Z |
| last_indexed |
2025-12-07T19:21:17Z |
| _version_ |
1850878489057558528 |