Bolometric characteristics of macroporous silicon structures
Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporou...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119270 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730545871454208 |
|---|---|
| author | Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| author_facet | Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| citation_txt | Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1-4%), low noise level (2*10⁻⁹ VHz⁻¹/²) and good radiation absorption in the operation spectral region.
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| first_indexed | 2025-12-07T19:21:17Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119270 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:21:17Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. 2017-06-05T17:16:33Z 2017-06-05T17:16:33Z 2001 Bolometric characteristics of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 177-181. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60Cp https://nasplib.isofts.kiev.ua/handle/123456789/119270 Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature dependencies of electron conductivity, concentration and mobility in macroporous silicon emulate the temperature curves of the corresponding parameters for crystalline silicon. The investigated macroporous silicon structures are promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1-4%), low noise level (2*10⁻⁹ VHz⁻¹/²) and good radiation absorption in the operation spectral region. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Bolometric characteristics of macroporous silicon structures Article published earlier |
| spellingShingle | Bolometric characteristics of macroporous silicon structures Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| title | Bolometric characteristics of macroporous silicon structures |
| title_full | Bolometric characteristics of macroporous silicon structures |
| title_fullStr | Bolometric characteristics of macroporous silicon structures |
| title_full_unstemmed | Bolometric characteristics of macroporous silicon structures |
| title_short | Bolometric characteristics of macroporous silicon structures |
| title_sort | bolometric characteristics of macroporous silicon structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119270 |
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