Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration
High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be ex...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119320 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862668426490675200 |
|---|---|
| author | Bogoboyashchyy, V.V. |
| author_facet | Bogoboyashchyy, V.V. |
| citation_txt | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be explained using the conception of the non-parabolic band. The proposed model enabled to determine the differential state density in the band being based on the results of measurements. It was found that the heavy hole dispersion law at ε < 0.15 eV have the relativistic form in the framework of the measurements accuracy, where and eV for all studied compositions x. It was also shown that intrinsic electron concentration in CdTe at high temperatures (higher than 800 K), calculated with the found heavy hole state density, agrees quantitatively with known experimental data.
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| first_indexed | 2025-12-07T15:25:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119320 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:25:35Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bogoboyashchyy, V.V. 2017-06-06T11:19:35Z 2017-06-06T11:19:35Z 2001 Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 621.315.592.2; 535.343.2 https://nasplib.isofts.kiev.ua/handle/123456789/119320 High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be explained using the conception of the non-parabolic band. The proposed model enabled to determine the differential state density in the band being based on the results of measurements. It was found that the heavy hole dispersion law at ε < 0.15 eV have the relativistic form in the framework of the measurements accuracy, where and eV for all studied compositions x. It was also shown that intrinsic electron concentration in CdTe at high temperatures (higher than 800 K), calculated with the found heavy hole state density, agrees quantitatively with known experimental data. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration Article published earlier |
| spellingShingle | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration Bogoboyashchyy, V.V. |
| title | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_full | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_fullStr | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_full_unstemmed | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_short | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| title_sort | density of heavy hole states of hg₁-xcdxte in an isotropic nonparabolic approximation by exact measurements of electron concentration |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119320 |
| work_keys_str_mv | AT bogoboyashchyyvv densityofheavyholestatesofhg1xcdxteinanisotropicnonparabolicapproximationbyexactmeasurementsofelectronconcentration |